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savantic semiconductor product specification silicon npn power transistors 2SC1868 description with to-3 package wide area of safe operation high voltage ,high speed applications for switching regulator application pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 450 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1868 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 450 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 1.0 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.5 v i cbo collector cut-off current v cb =450v; i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =5v 15 50 h fe-2 dc current gain i c =5a ; v ce =5v 10
savantic semiconductor product specification 3 silicon npn power transistors 2SC1868 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

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